Time:
Purchaser: A scientific research institute in France
Production unit: Henan Sante Furnace Technology Co., Ltd.
Model: STGP-100-12
Main purpose:
A new preparation technology that uses the strong chemical activity of plasma to improve the reaction conditions to make the gaseous substances containing thin films react chemically and realize the growth of thin film materials, and finally obtain the desired thin film on the substrate.Which is suitable for processing at 1200 °C Deposition of SiO2.SiNx Thin Film.
Basic parameters:
Maximum temperature: 1200 ℃
Working temperature: 1100 ℃
Furnace tube size: 100*1200mm (tube outer diameter*length)
Heating element: HRE resistance wire
Voltage: 220v
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